Influence of strain on the anisotropy of antiferromagnets

Project leaders: PD Dr. M. Jourdan,, Prof. H.-J. Elmers

Supported by the DFG via TRR173/1 Spin + X.

The relation between structural and magnetic, i.e. spin-related, properties is one of the most fundamental aspects of solid state physics. The magnetically ordered state of solids can be influenced by various externally controllable parameters. For spintronics applications in most cases Oersted fields, spin-transfer torques (STT) and spin-orbit torques (SOT) are employed. Alternatively, structural distortions modify magnetic properties. Such modifications provide means for voltage controlled switching of thin magnetic films on piezoelectric substrates, presenting new pathways for future spintronics with low energy consumption. Combined with new compounds, like the antiferromagnet Mn2Au with strong spin-orbit coupling and broken inversion symmetry on the spin sublattices, novel spintronics devices may emerge.

The usual concepts of spintronics rely on the magnetization of ferromagnets (FMs) for data storage and manipulation. An exciting alternative concept is provided if antiferromagnets (AFMs) could be used, e.g. by employing the direction of the staggered momentum for data storage, as these are intrinsically not susceptible to strong fields.


For more details please see:
Jourdan et al., J. Phys. D: Appl. Phys. 48, 385001 (2015)